Memory Summary For DESKTOP-H2V7Q8R
Number of Memory Devices: 1 Total Physical Memory: 8085 MB (8192 MB)
Total Available Physical Memory: 3238 MB
Memory Load: 59%
| Item | Slot #1 | Slot #2 |
|---|
| Ram Type |
DDR4 |
Not Populated |
| Maximum Clock Speed (MHz) |
1200 (JEDEC) |
|
| Maximum Transfer Speed (MHz) |
DDR4-2400 |
|
| Maximum Bandwidth (MB/s) |
PC4-19200 |
|
| Memory Capacity (MB) |
8192 |
|
| DIMM Temperature |
N/A |
|
| Jedec Manufacture Name |
Samsung |
|
| Search Amazon.com |
Search! |
|
| SPD Revision |
1.1 |
|
| Registered |
No |
|
| ECC |
No |
|
| On-Die ECC |
No |
|
| DIMM Slot # |
1 |
|
| Manufactured |
Week 20 of Year 2017 |
|
| Module Part # |
M378A1K43BB2-CRC |
|
| Module Revision |
0x0 |
|
| Module Serial # |
0x35B6FA23 |
|
| Module Manufacturing Location |
2 |
|
| # of Row Addressing Bits |
16 |
|
| # of Column Addressing Bits |
10 |
|
| # of Banks |
16 |
|
| # of Ranks |
1 |
|
| Device Width in Bits |
8 |
|
| Bus Width in Bits |
64 |
|
| Module Voltage |
1.2V |
|
| CAS Latencies Supported |
10 11 12 13 14 15 16 17 18 |
|
| Timings @ Max Frequency (JEDEC) |
17-17-17-39 |
|
| Maximum frequency (MHz) |
1200 |
|
| Maximum Transfer Speed (MHz) |
DDR4-2400 |
|
| Maximum Bandwidth (MB/s) |
PC4-19200 |
|
| Minimum Clock Cycle Time, tCK (ns) |
0.833 |
|
| Minimum CAS Latency Time, tAA (ns) |
13.750 |
|
| Minimum RAS to CAS Delay, tRCD (ns) |
13.750 |
|
| Minimum Row Precharge Time, tRP (ns) |
13.750 |
|
| Minimum Active to Precharge Time, tRAS (ns) |
32.000 |
|
| Minimum Row Active to Row Active Delay, tRRD (ns) |
3.300 |
|
| Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns) |
45.750 |
|
| Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns) |
350.000 |
|
| |
|
|
| DDR4 Specific SPD Attributes |
|
|
| Maximum Clock Cycle Time, tCKmax (ns) |
1.600 |
|
| Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC2 (ns) |
260.000 |
|
| Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC4 (ns) |
160.000 |
|
| Minimum Activate to Activate Delay Time different bank group, tRRD_Smin (ns) |
3.300 |
|
| Minimum Activate to Activate Delay Time same bank group, tRRD_Lmin (ns) |
4.900 |
|
| Minimum CAS to CAS Delay Time same bank group, tCCD_Lmin (ns) |
5.000 |
|
| Minimum Four Activate Window Delay (ns) |
21.000 |
|
| Maximum Activate Window in units of tREFI |
8192 |
|
| Thermal Sensor Present |
No |
|
| DRAM Stepping |
0 |
|
| DRAM Manufacture |
Samsung |
|
| SDRAM Package Type |
Monolithic, 1 die, Single load stack |
|
| Maximum Activate Count (MAC) |
Unlimited MAC |
|
| Post Package Repair Supported |
Yes |
|
| Module Type |
UDIMM |
|
| Module Height (mm) |
32 |
|
| Module Thickness (front), (mm) |
2 |
|
| Module Thickness (back), (mm) |
2 |
|
| Reference Raw Card Used |
Raw Card A Rev. 19 |
|